This letter investigates the large spread of values of capacitance measured in Si/TiO₂ MIS structures for different properties of the TiO₂ layer and proposes an approach to understand the behavior of the system. Experimental results show large variations of the maximum capacitance with TiO₂ thickness for the as-deposited structures and further highlight the change of trend after annealing. Simulations qualitatively depict the theoretical trends explaining the C–V characteristics to the first order, by the different behaviors of the oxide layer in the structure and the distribution of the majority carriers showing depletion effects.

中文翻译：

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来自Si 上 MIS 结构的C - V特性的中等掺杂 TiO ₂层的耗尽效应

这封信调查了在 Si/TiO ₂ MIS 结构中针对 TiO ₂层的不同特性测量的电容值的大范围分布，并提出了一种理解系统行为的方法。实验结果表明，沉积结构的最大电容随 TiO ₂厚度的变化很大，并进一步突出了退火后的趋势变化。模拟通过结构中氧化层的不同行为和显示耗尽效应的多数载流子分布，定性地描述了解释一阶C - V特性的理论趋势。