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Low-Threshold Lasing from Copper-Doped CdSe Colloidal Quantum Wells
Laser & Photonics Reviews ( IF 9.8 ) Pub Date : 2021-05-04 , DOI: 10.1002/lpor.202100034 Junhong Yu 1 , Manoj Sharma 1 , Mingjie Li 2 , Savas Delikanli 1, 3 , Ashma Sharma 1 , Muhammad Taimoor 4 , Yemliha Altintas 3, 5 , James R. McBride 6 , Thomas Kusserow 4 , Tze‐Chien Sum 2 , Hilmi Volkan Demir 1, 2, 3 , Cuong Dang 1, 7
Laser & Photonics Reviews ( IF 9.8 ) Pub Date : 2021-05-04 , DOI: 10.1002/lpor.202100034 Junhong Yu 1 , Manoj Sharma 1 , Mingjie Li 2 , Savas Delikanli 1, 3 , Ashma Sharma 1 , Muhammad Taimoor 4 , Yemliha Altintas 3, 5 , James R. McBride 6 , Thomas Kusserow 4 , Tze‐Chien Sum 2 , Hilmi Volkan Demir 1, 2, 3 , Cuong Dang 1, 7
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Transition metal doped colloidal nanomaterials (TMDCNMs) have recently attracted attention as promising nano-emitters due to dopant-induced properties. However, despite ample investigations on the steady-state and dynamic spectroscopy of TMDCNMs, experimental understandings of their performance in stimulated emission regimes are still elusive. Here, the optical gain properties of copper-doped CdSe colloidal quantum wells (CQWs) are systemically studied with a wide range of dopant concentration for the first time. This work demonstrates that the amplified spontaneous emission (ASE) threshold in copper-doped CQWs is a competing result between the biexciton formation, which is preferred to achieve population inversion, and the hole trapping which stymies the population inversion. An optimum amount of copper dopants enables the lowest ASE threshold of ≈7 µJ cm−2, about 8-fold reduction from that in undoped CQWs (≈58 µJ cm−2) under sub-nanosecond pulse excitation. Finally, a copper-doped CQW film embedded in a vertical cavity surface-emitting laser (VCSEL) structure yields an ultralow lasing threshold of 4.1 µJ cm−2. Exploiting optical gain from TMDCNMs may help to further boost the performance of colloidal-based lasers.
中文翻译：
铜掺杂 CdSe 胶体量子阱的低阈值激光
由于掺杂剂诱导的特性，过渡金属掺杂的胶体纳米材料（TMDCNMs）最近作为有前途的纳米发射体引起了人们的注意。然而，尽管对 TMDCNM 的稳态和动态光谱进行了大量研究，但对其在受激发射状态下的性能的实验理解仍然难以捉摸。在这里，首次系统地研究了铜掺杂 CdSe 胶体量子阱 (CQW) 的光学增益特性，其掺杂浓度范围很广。这项工作表明，铜掺杂 CQW 中的放大自发发射 (ASE) 阈值是双激子形成（优选实现粒子数反转）与阻碍粒子数反转的空穴捕获之间的竞争结果。-2，在亚纳秒脉冲激发下比未掺杂的 CQW (≈58 µJ cm -2 )减少约 8 倍。最后，嵌入垂直腔面发射激光器 (VCSEL) 结构的掺铜 CQW 膜产生 4.1 µJ cm -2的超低激光阈值。利用 TMDCNM 的光学增益可能有助于进一步提高胶体激光器的性能。
更新日期：2021-06-10
中文翻译：
铜掺杂 CdSe 胶体量子阱的低阈值激光
由于掺杂剂诱导的特性，过渡金属掺杂的胶体纳米材料（TMDCNMs）最近作为有前途的纳米发射体引起了人们的注意。然而，尽管对 TMDCNM 的稳态和动态光谱进行了大量研究，但对其在受激发射状态下的性能的实验理解仍然难以捉摸。在这里，首次系统地研究了铜掺杂 CdSe 胶体量子阱 (CQW) 的光学增益特性，其掺杂浓度范围很广。这项工作表明，铜掺杂 CQW 中的放大自发发射 (ASE) 阈值是双激子形成（优选实现粒子数反转）与阻碍粒子数反转的空穴捕获之间的竞争结果。-2，在亚纳秒脉冲激发下比未掺杂的 CQW (≈58 µJ cm -2 )减少约 8 倍。最后，嵌入垂直腔面发射激光器 (VCSEL) 结构的掺铜 CQW 膜产生 4.1 µJ cm -2的超低激光阈值。利用 TMDCNM 的光学增益可能有助于进一步提高胶体激光器的性能。
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