The terahertz (THz) band has opened up a new frontier for high-speed, wireless communication, high-resolution radars, and highly precise remote sensing. Identifying the low-loss atmospheric windows is vital for these applications. In this study, a long-path THz communication channel is characterized in the frequency range of 0.32–1.1 THz using a custom, silicon-based THz pulse radiator chip. The chip radiates 1.7-ps pulses via an on-chip antenna at a repetition rate of 8 GHz, resulting in a broadband 0.1–1.1 THz frequency comb. It is fabricated in 130-nm SiGe BiCMOS process and consumes 45 mW of dc power. A specular link was created using the impulse radiator, parabolic reflector antennas, a plane mirror, and a downconverter mixer. The THz channel was characterized up to a distance of 110 m. The measurement results demonstrate channel path loss, atmospheric absorption, and low-loss frequency windows suitable for wireless links in the THz range. The results correspond well with the HITRAN database [1].

中文翻译：

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在130 Nm SiGe BiCMOS中使用宽带频率梳状辐射器进行太赫兹通道表征

太赫兹（THz）频段为高速，无线通信，高分辨率雷达和高精度遥感技术开辟了一个新领域。识别低损耗的大气窗对于这些应用至关重要。在这项研究中，使用定制的基于硅的THz脉冲辐射器芯片，可在0.32–1.1 THz的频率范围内表征长途THz通信信道。芯片通过片上天线以8 GHz的重复频率辐射1.7 ps脉冲，从而产生了0.1–1.1 THz的宽带频率梳。它采用130 nm SiGe BiCMOS工艺制造，消耗45 mW的直流功率。使用脉冲辐射器，抛物线反射器天线，平面镜和下变频器混频器创建了镜面链接。太赫兹通道的特征是长达110 m的距离。测量结果表明信道路径损耗，大气吸收和低损耗频率窗口，适用于THz范围内的无线链路。结果与HITRAN数据库[1]吻合得很好。