An on-chip millimeter-wave (mm-wave) broad-band bandpass filter (BPF) developed in bulk CMOS technology is reported. It is based on a two-layered implementation in which the circuit structure patterned in the top layer exhibits a highpass-type filtering response, whereas an upper stopband is created by the bottom-layer cell when coupled to the top-layer one to obtain a composite overall quasi-elliptic-type wide-band BPF functionality. The locations of the transmission zeros (TZs), which confer sharp-rejection capabilities to the overall frequency response, can be flexibly adjusted with the values of the capacitors that are employed in both layers. A simplified equivalent lumped-element circuit model of the proposed wide-band BPF approach is provided and applied to multi-stage BPF arrangements for higher-selectivity designs. Furthermore, for practical-demonstration purposes, an on-chip passive-integrated single-stage broad-band BPF prototype on silicon with 34.5-GHz center frequency and 61.2% 3-dB relative bandwidth is designed, manufactured, and characterized.

中文翻译：

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CMOS技术中的毫米波宽带带通滤波器，使用两层高通型方法并带有嵌入式上阻带

据报道，采用体CMOS技术开发的片上毫米波（mm波）宽带带通滤波器（BPF）。它基于两层实现，其中在顶层中构图的电路结构表现出高通型滤波响应，而当与顶层耦合时，底层单元会产生一个上阻带，从而获得一个高通带。复合整体准椭圆型宽带BPF功能。传输零点（TZ）的位置可以为整个频率响应提供尖锐的抑制能力，可以通过在两层中使用的电容器的值灵活地进行调整。提供了所提出的宽带BPF方法的简化等效等效集总电路模型，并将其应用于用于更高选择性设计的多级BPF装置。此外，