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Proposal of High Density Two-Bits-Cell Based NAND-Like Magnetic Random Access Memory
IEEE Transactions on Circuits and Systems II: Express Briefs ( IF 4.0 ) Pub Date : 2021-03-11 , DOI: 10.1109/tcsii.2021.3065458
Zhitai Yu , Yijiao Wang , Zeqing Zhang , Kuiqing He , Lang Zeng , Zhaohao Wang , Weisheng Zhao

Computation of maximum voltage droop in power delivery networks is important for performance estimation. This article proposes a methodology to predict the maximum voltage droop caused by current sources in ICs. We derive the analytical relations and analyze the error in the predicted voltage droop values. Furthermore, we consider the effect of current step rise time on the voltage droop along with error analysis. Results capture the error bounds for the analytical equations derived.

中文翻译:


基于高密度两位单元的类 NAND 磁性随机存取存储器的提议



供电网络中最大电压降的计算对于性能评估非常重要。本文提出了一种预测 IC 中电流源引起的最大电压降的方法。我们推导了解析关系并分析了预测电压降值的误差。此外,我们还考虑了电流阶跃上升时间对电压降的影响以及误差分析。结果捕获了导出的分析方程的误差范围。
更新日期:2021-03-11
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