A simple method for the determination of a Si p+/n junction depth is presented. The method is designed to delineate the specific junction due to its importance in the field of Si solar cells where cost effective and fast characterization techniques are necessary. It consists of the electrochemical transformation of the p + Si to porous Si. The determination of the porous Si depth with the use of cross-sectional Scanning Electron Microscope (SEM) images provides a direct, fast and easy to implement measurement of the junction depth. In addition, through a simple 4-point probe electrical measurement of the sheet resistance, the average dopant concentration is determined, which allows the creation of an abrupt junction approximation of the p+/n junction. The method is shown to produce accurate results in two types of doping techniques, namely implantation and spin-on-doping and a range of junction depths between 200 nm and 1500 nm, as compared to the well-established secondary ion mass spectrometry (SIMS) technique.

介绍了一种确定Si p + / n结深的简单方法。该方法旨在描述特定结，因为它在需要成本有效且快速的表征技术的Si太阳能电池领域具有重要意义。它由p + Si电化学转变为多孔Si组成。使用横截面扫描电子显微镜（SEM）图像确定多孔硅的深度，可以直接，快速，轻松地实现对结深的测量。此外，通过对薄层电阻的简单4点探针电测量，可以确定平均掺杂剂浓度，从而可以创建p + / n结的突变结近似值。结果表明，该方法可在两种掺杂技术中产生准确的结果，