$\mathrm{Bi}\mathrm{Fe}{\mathrm{O}}_3$ (BFO) is the only material known to have both magnetism and strong ferroelectricity at room temperature. BFO inks prepared by the sol-gel method are deposited on FTO substrates, dense and stable BFO thin films are formed by multiple printing and pyrolysis processes. The effects of the inkjet voltage on surface and structure properties are characterized, and obvious bipolar resistive switching characteristics are obtained in Al/BFO/FTO devices. The resistance switching mechanism is primarily explained by the space charge limited conduction mechanism controlled by local traps. The switching between high resistance state and low resistance state is reproducible, reversible, and controllable. This result may enhance the application of BFO-based composites in non-volatile resistive random access memory.

$\mathrm{双}\mathrm{铁}{\mathrm{Ø}}_3$（BFO）是已知的在室温下同时具有磁性和强铁电性的唯一材料。通过溶胶-凝胶法制备的BFO油墨沉积在FTO基板上，通过多次印刷和热解过程形成致密且稳定的BFO薄膜。表征了喷墨电压对表面和结构性能的影响，并在Al / BFO / FTO器件中获得了明显的双极电阻切换特性。电阻切换机制主要由受局部陷阱控制的空间电荷受限传导机制来解释。在高电阻状态和低电阻状态之间的切换是可再现的，可逆的和可控制的。该结果可以增强基于BFO的复合材料在非易失性电阻式随机存取存储器中的应用。