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Tuning the optical and morphological features of CuxO thin films via La doping
Physica B: Condensed Matter ( IF 2.8 ) Pub Date : 2021-05-04 , DOI: 10.1016/j.physb.2021.413088
Serif Ruzgar , Yasemin Caglar , Ozgur Polat , Dinara Sobola , Mujdat Caglar

In the present investigation, the undoped and La doped CuxO thin films are deposited on glass substrates by sol-gel spin coating method. The effect of various La doping concentrations on the chemical composition, morphological and optical properties of CuxO thin films have been extensively studied using X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM), Scanning electron microscopy (SEM), and UV–Vis diffuse spectrophotometer. The valence states of Cu, La and O have been identified by X-ray photoelectron spectroscopy (XPS) method. The AFM have demonstrated that the surface roughness of CuxO thin films decreases with increasing La concentration. Optical analyses have revealed that the optical band gap energy of CuxO thin films widens from 2.063 eV to 2.090 eV as the La concentration increases from 0% to 10%. Moreover, the Urbach energies, Eu, of the undoped and La substituted CuxO thin films have been determined.



中文翻译:

通过La掺杂调整Cu x O薄膜的光学和形貌特征

在本研究中,未掺杂和La掺杂的Cu x O薄膜通过溶胶-凝胶旋涂法沉积在玻璃基板上。使用X射线光电子能谱(XPS),原子力显微镜(AFM),扫描电子显微镜(SEM)广泛研究了各种La掺杂浓度对Cu x O薄膜化学成分,形态和光学性质的影响,和紫外可见扩散分光光度计。Cu,La和O的化合价态已通过X射线光电子能谱法(XPS)进行了鉴定。原子力显微镜表明,Cu x O薄膜的表面粗糙度随着La浓度的增加而降低。光学分析表明,Cu x的带隙能为随着La浓度从0%增加到10%,O薄膜从2.063 eV扩大到2.090 eV。此外,已经确定了未掺杂和La取代的Cu x O薄膜的乌尔巴赫能E u

更新日期:2021-05-07
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