We proposed a silicon-based monolithic integrated multi-wavelength InAs/GaAs quantum dot microring laser array with radially coupled waveguides. To achieve the stable multi-wavelength lasing of the laser array in the 1.3 μm band, the three-dimensional finite-difference time-domain method is used to numerically optimize structure parameters of the microring laser with a connected III–V waveguide. The results show that the microring laser can realize a stable mode TE_50,1 with an outer-wall radius of 3.5 μm, a microring width of 1.0 μm, a cladding thickness of 1.50 μm, an etching depth of 5.255 μm and a waveguide width of 0.5 μm. The mode wavelength is 1302.43 nm with a quality factor of 20,093.6. The optical coupling efficiency from the laser to the waveguide is about 47.8%. Moreover, mode wavelengths can be adjusted by the microring radius. When the microring width is 1.0 μm, changing the outer-wall radius from 2.7 to 3.9 μm with an interval of 0.2 μm, the mode wavelength ranges from 1289.29 to 1307.28 nm with a step of about 3.00 nm. It is feasible to achieve multi-wavelength laser arrays for monolithic silicon integration, which facilitates the preparation of silicon-based III–V multi-wavelength integrated light sources for dense wavelength division multiplexing applications.

我们提出了一种具有径向耦合波导的基于硅的单片集成多波长InAs / GaAs量子点微环激光器阵列。为了在1.3μm的波段内实现稳定的多波长激光发射，使用三维有限差分时域方法在数值上优化了具有连接的III–V波导的微环激光器的结构参数。结果表明，微环激光器可以实现稳定模式TE _50,1具有3.5μm的外壁半径，1.0μm的微环宽度，1.50μm的包层厚度，5.255μm的蚀刻深度和0.5μm的波导宽度。模式波长为1302.43 nm，品质因数为20,093.6。从激光器到波导的光耦合效率约为47.8％。而且，模式波长可以通过微环半径来调节。当微环宽度为1.0μm时，以0.2μm的间隔将外壁半径从2.7更改为3.9μm，则模式波长的范围为1289.29至1307.28 nm，步长约为3.00 nm。实现用于单片硅集成的多波长激光器阵列是可行的，这有助于制备用于密集波分复用应用的基于硅的III–V多波长集成光源。