In this paper, a novel long afterglow green luminescent material of Ga₄GeO₈: Tb³⁺ has been successfully synthesized by high-temperature solid-state method. Ga₄GeO₈ showed long afterglow blue emission peaked at 490 nm. When Tb³⁺ ions were introduced into the host, the strong long afterglow green emission from the f-f transition of Tb³⁺ appeared and the blue afterglow emission of the host disappeared completely. Furthermore, the obtained results have shown that the afterglow emission of the host overlapped with typical excitation wavelengths of Tb³⁺ in the range 300–500 nm, indicating of persistent energy transfer from the host to Tb³⁺ ions. The thermoluminescence curves monitored at 490 and 550 nm belonged to the afterglow emissions of host and Tb³⁺ respectively were similar, which consisted of two peaks at T_A (303 K) and T_B (350 K) corresponded to the shallow trap and the deep trap and the trap depths were estimated to be 0.606 and 0.732 eV. This further confirmed that the persistent energy transfer form host to Tb³⁺ ions was responsible for the excellent long afterglow green luminescence of Ga₄GeO₈: Tb³⁺. Thus, the efficient persistent energy transfer of host to emitting center can be regarded as an effective strategy to realize more colors novel long afterglow luminescent materials.

本文通过高温固态法成功地合成了一种新型的长余辉绿色Ga ₄ GeO ₈：Tb ³⁺发光材料。Ga ₄ GeO ₈表现出长余辉蓝色发射，峰值在490 nm。当将Tb ³⁺离子引入主体时，Tb ³⁺的ff跃迁产生了强烈的长余辉绿色发射，并且主体的蓝色余辉发射完全消失了。此外，获得的结果表明，主体的余辉发射与Tb ^3+的典型激发波长在300–500 nm范围内重叠，表明从主体到Tb的持续能量转移³⁺离子。在490和550 nm处监测的热发光曲线分别属于主体和Tb ³⁺的余辉发射，由T _A（303 K）和T _B（350 K）的两个峰组成，分别对应于浅阱和深陷阱和陷阱深度估计为0.606和0.732 eV。这进一步证实了向Tb ³⁺离子的持久能量传递形式是Ga ₄ GeO ₈：Tb ³⁺优异的长余辉绿色发光的原因。。因此，主体向发光中心的有效持久能量转移可以被视为实现更多颜色的新型长余辉发光材料的有效策略。