In the present work, the structural, optical and electrical properties of pristine and aluminium doped zinc oxide (AZO) thin films deposited on fluorine doped tin oxide (FTO) coated glass substrates by sol-gel spin coating technique are explored. Further, the effect of doping on the performance of Au/AZO/FTO Schottky diode were analysed through I–V characterization at room temperature. The c-axis orientation of the deposited films was confirmed by X-Ray diffraction studies. Micrographs from atomic force microscope revealed the wrinkled morphology and columnar structure for undoped and doped zinc oxide thin films respectively. The diode parameters such as Schottky barrier height (Φ_B), ideality factor (n) and series resistance (Rs) were determined by using thermionic emission model and Cheung's model. These parameters were found to depend on the doping concentration. Devices with undoped and 6 at% aluminium doped ZnO thin films have shown better rectification.

在目前的工作中，探索了通过溶胶-凝胶旋涂技术在氟掺杂氧化锡（FTO）涂层玻璃基板上沉积的原始铝掺杂氧化锌（AZO）薄膜的结构，光学和电学性质。此外，通过室温下的IV特性分析了掺杂对Au / AZO / FTO肖特基二极管性能的影响。通过X射线衍射研究证实了沉积膜的c轴取向。原子力显微镜的显微照片分别显示了未掺杂和掺杂的氧化锌薄膜的皱纹形态和柱状结构。二极管参数，如肖特基势垒高度（Φ_乙），理想因子（n）的使用热电子发射模型和Cheung模型确定串联电阻（Rs）。发现这些参数取决于掺杂浓度。具有未掺杂和6at％铝掺杂的ZnO薄膜的器件已显示出更好的整流性能。