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Development of dry‐nano‐polishing technique using reactive ion etching for ultra thin titanium wafer
Electronics and Communications in Japan ( IF 0.5 ) Pub Date : 2021-05-01 , DOI: 10.1002/ecj.12317
Teruya Chino 1 , Yuta Watanabe 1 , Yosuke Tsukiyama 1 , Masayuki Sohgawa 1 , Takashi Abe 1
Affiliation  

In this study, we developed a dry‐nano‐polishing technique using reactive ion etching for ultra thin titanium wafer. The surface of titanium coated with photoresist is polished by reactive ion etching using SF6 /C4F8 gas. Etching speed of titanium and photoresist were adjusted to close to each other by changing temperature and ratio of SF6 /C4F8 gas. By etching titanium under these conditions, the smooth surface shape of the resist was transferred to titanium. By combining with photolithography, it is possible to polish a specific part.

中文翻译:

利用反应离子刻蚀对超薄钛晶片进行干纳米抛光技术的发展

在这项研究中,我们开发了一种使用反应离子刻蚀的超薄钛晶片干纳米抛光技术。通过使用SF6 / C4F8气体的反应性离子蚀刻对涂有光致抗蚀剂的钛表面进行抛光。通过改变温度和SF 6 / C 4 F 8气体的比例,将钛和光致抗蚀剂的蚀刻速度调整为彼此接近。通过在这些条件下蚀刻钛,抗蚀剂的光滑表面形状被转移到钛上。通过与光刻相结合,可以抛光特定的部分。
更新日期:2021-05-02
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