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Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-04-30 , DOI: 10.1002/pssr.202100090 Qihua Zhang 1 , Xue Yin 1 , Songrui Zhao 1
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-04-30 , DOI: 10.1002/pssr.202100090 Qihua Zhang 1 , Xue Yin 1 , Songrui Zhao 1
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Over the past decades, the aluminum gallium nitride (AlGaN) alloy system has received wide interest for the development of semiconductor deep ultraviolet (DUV) lasers due to its direct, tunable, and ultrawide bandgap energies (3.4–6.2 eV). The progress, nonetheless, has been remained slow, which is ascribed to a few major challenges, including large dislocation and defect densities, difficulty in obtaining p-type high-Al-content AlGaN layers with a sufficient p-type conduction, the large electric polarization fields, and the unfavorable optical polarization. In recent years, with AlGaN alloys grown by molecular beam epitaxy (MBE), including both thin films and nanowire structures, remarkable advancements have been made, such as highly conductive p-type high-Al-content AlGaN epilayers with resistivities as low as 0.7 Ω cm and DUV lasing down to 239 nm with nanowire structures under a direct current injection. Herein, the recent progress on the DUV lasers by the MBE-grown AlGaN is reviewed. The challenges and prospects of the MBE-grown AlGaN for DUV lasers are also discussed.
中文翻译：
分子束外延氮化铝镓深紫外激光器研究进展
在过去的几十年中，氮化铝镓 (AlGaN) 合金系统由于其直接、可调谐和超宽带隙能量 (3.4–6.2 eV)，在半导体深紫外 (DUV) 激光器的开发中受到了广泛的关注。尽管如此，进展仍然缓慢，这归因于一些主要挑战，包括大的位错和缺陷密度，难以获得具有足够 p 型传导的 p 型高铝含量 AlGaN 层，大的电偏振场，以及不利的光偏振。近年来，通过分子束外延 (MBE) 生长的 AlGaN 合金，包括薄膜和纳米线结构，取得了显着进步，例如电阻率低至 0 的高导电 p 型高铝含量 AlGaN 外延层. 7 Ω cm 和 DUV 在直流注入下用纳米线结构发射低至 239 nm 的激光。在此，回顾了 MBE 生长的 AlGaN 深紫外激光器的最新进展。还讨论了 MBE 生长的 AlGaN 用于 DUV 激光器的挑战和前景。
更新日期：2021-04-30
中文翻译：
分子束外延氮化铝镓深紫外激光器研究进展
在过去的几十年中，氮化铝镓 (AlGaN) 合金系统由于其直接、可调谐和超宽带隙能量 (3.4–6.2 eV)，在半导体深紫外 (DUV) 激光器的开发中受到了广泛的关注。尽管如此，进展仍然缓慢，这归因于一些主要挑战，包括大的位错和缺陷密度，难以获得具有足够 p 型传导的 p 型高铝含量 AlGaN 层，大的电偏振场，以及不利的光偏振。近年来，通过分子束外延 (MBE) 生长的 AlGaN 合金，包括薄膜和纳米线结构，取得了显着进步，例如电阻率低至 0 的高导电 p 型高铝含量 AlGaN 外延层. 7 Ω cm 和 DUV 在直流注入下用纳米线结构发射低至 239 nm 的激光。在此，回顾了 MBE 生长的 AlGaN 深紫外激光器的最新进展。还讨论了 MBE 生长的 AlGaN 用于 DUV 激光器的挑战和前景。
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