Cerous Fluoride Dopant-Free Electron-Selective Contact for Crystalline Silicon Solar Cells,Physica Status Solidi-Rapid Research Letters

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Cerous Fluoride Dopant-Free Electron-Selective Contact for Crystalline Silicon Solar Cells
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-04-30 , DOI: 10.1002/pssr.202100135
Wenxian Wang ₁ , Lun Cai _{1,

2} , Lanxiang Meng ₁ , LinKun Zhang ₁ , Nuo Chen ₁ , Hui Shen ₁ , Zongcun Liang ₁

Affiliation

Dopant-free carrier-selective contacts have drawn intensive attention for efficient crystalline silicon (c-Si) photovoltaics due to the low-temperature simple process and better carrier selectivity. By incorporating a thermally evaporated dielectric film cerium fluoride (CeF₃) as the electron transport layer (ETL) between a c-Si(n) and aluminum (Al) electrode, higher conversion efficiency of the crystalline silicon solar cell is obtained, which is 21.27% compared to 16.89% of a reference cell without CeF₃. The insertion of an ultrathin CeF₃ ETL helps in alleviating the strong Fermi-level pinning at the interface, leading to better electron transport with a low contact resistivity of 10.96 mΩ cm². The morphology and element distribution of the interface are also investigated by high-resolution transmission electron microscopy (HRTEM). The primary results demonstrate that the utilization of kinds of lanthanide fluorides, including CeF₃, offers a good choice for efficient and cost-effective electron-selective contacts for optical–electrical devices.

中文翻译：

用于晶体硅太阳能电池的无氟化铈电子选择性接触

由于低温简单的工艺和更好的载流子选择性，无掺杂的载流子选择性接触引起了高效晶体硅（c-Si）光伏的广泛关注。通过在 c-Si(n) 和铝 (Al) 电极之间加入热蒸发介电膜氟化铈 (CeF ₃ ) 作为电子传输层 (ETL)，可以获得更高的晶体硅太阳能电池转换效率，即21.27% 与不含 CeF ₃的参考电池的 16.89% 相比。超薄 CeF ₃ ETL的插入有助于减轻界面处的强费米能级钉扎，从而以 10.96 mΩ cm ²的低接触电阻率实现更好的电子传输. 还通过高分辨率透射电子显微镜 (HRTEM) 研究了界面的形态和元素分布。主要结果表明，使用各种镧系元素氟化物，包括 CeF ₃，为光电器件的高效且具有成本效益的电子选择性接触提供了一个很好的选择。

更新日期：2021-04-30

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