Using Sagdeev pseudo-potential technique, we have studied the arbitrary amplitude ion acoustic solitons, double layers and supersolitons in a collisionless plasma consisting of adiabatic warm ions, non-thermal hot electrons and isothermal cold electrons immersed in an external uniform static magnetic field. We have used the phase portraits of the dynamical system describing the non-linear behaviour of ion acoustic waves to confirm the existence of different solitary structures. We have found that the system supports (a) positive potential solitons, (b) negative potential solitons, (c) coexistence of both positive and negative potential solitons, (d) negative potential double layers, (e) negative potential supersolitons and (f) positive potential supersolitons. Again, we have seen that the amplitude of the positive potential solitons decreases or increases with increasing n ch according to whether 0<nch<nch(c)$0{< }{n}_{ch}{< }{n}_{ch}^{\left(c\right)}$ or nch(c)<nch≤1${n}_{ch}^{\left(c\right)}{< }{n}_{ch}\le 1$, where nch${n}_{ch}$ is the ratio of isothermal cold and non-thermal hot electron number densities, and nch(c)${n}_{ch}^{\left(c\right)}$ is a critical value of n ch . Also, we have seen that the amplitude of the positive potential solitons decreases with increasing β e , where β e is the non-thermal parameter. We have also investigated the transition of different negative potential solitary structures: negative potential soliton (before the formation of negative potential double layer) → negative potential double layer → negative potential supersoliton → negative potential soliton (after the formation of negative potential double layer) by considering the variation of θ only, where θ is angle between the direction of the external uniform static magnetic field and the direction of propagation of the ion acoustic wave.

中文翻译：

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非热和等温电子组成的无碰撞磁化等离子体中的任意振幅离子声孤子，双层和超孤子

使用Sagdeev伪势技术，我们研究了由绝热温离子，非热热电子和等温冷电子组成的无碰撞等离子体的任意振幅离子声孤子，双层和超孤子，这些等离子体浸在外部均匀静磁场中。我们使用动力学系统的相图描述离子声波的非线性行为，以确认存在不同的孤立结构。我们发现系统支持（a）正电势孤子，（b）负电势孤子，（c）正电势和负电势孤子并存，（d）负电势双层，（e）负电势超孤子和（f） ）正势超孤子。再次，我们已经看到，正电位孤子的振幅根据nch的增加而减小或增加，这取决于0 <nch <nch（c）$ 0 {<} {n} _ {ch} {<} {n} _ {ch} ^ {\ left（c \ right）} $或nch（c）<nch≤1$ {n} _ {ch} ^ {\ left（c \ right）} {<} {n} _ {ch} \ le 1 $，其中nch $ {n} _ {ch} $是等温冷电子数密度与非热热电子数密度之比，而nch（c）$ {n} _ {ch} ^ {\ left（c \ right ）} $是n ch的临界值。同样，我们已经看到，正电势孤子的幅度随着βe的增加而减小，其中βe是非热参数。我们还研究了不同的负电位孤立结构的过渡：