A new device structure for the Si tunnel field-effect transistor (TFET) is proposed along with feasible fabrication processes. The device consists of a Si fin with high impurity concentration at the fin surfaces, which are realized using the tilted-ion-implantation technique (TII) to effectively generate the gate-normal band-to-band tunneling (BTBT) and simultaneously create carrier conduction paths from the source to the drain. Device simulation revealed that the asymmetric impurity distribution, with a higher concentration on the source side and a lower concentration on the drain side controlled by the TII energy and angle, has potential for the realization of a high eGR/hGR by reducing the BTBT distance and a low off-state leakage. As a result, a steep on/off switching with a current ratio greater than 10⁵ under an operating voltage of 0.3 V can be achieved by careful optimization of the implanted impurity distributions.

提出了一种用于硅隧道场效应晶体管（TFET）的新器件结构以及可行的制造工艺。该器件由在鳍片表面具有高杂质浓度的硅鳍片组成，该硅鳍片使用倾斜离子注入技术（TII）实现，以有效地产生栅极法向带间隧穿（BTBT）并同时创建载流子从源极到漏极的传导路径。器件仿真显示，不对称杂质分布受TII能量和角度控制，在源极侧浓度较高，而在漏极侧浓度较低，可以通过减小BTBT距离和减小BTBT距离实现高eGR / hGR。低的关态泄漏。结果，陡峭的开/关切换电流比大于10 ⁵ 通过仔细优化注入的杂质分布，可以在0.3 V的工作电压下获得最佳电压。