The charge-plasma based dopingless (DL) tunnel field effect transistor (TFET) is considered as an emerging TFET structure resulting from its immunity against random dopant fluctuations and not requiring high thermal budgets and expensive annealing methods for fabrication. But, temperature sensitivity is a major concern to predict the reliability of a device as the bandgap of semiconductor material changes under the influence of temperature variations when used in a system. Therefore, in this manuscript, the effect of variations in temperature (200–500 K) are investigated on the analog/RF and linearity characteristics of a Si/Ge hetero-junction (HJ) asymmetric double gate (ADG) DLTFET and abbreviated as HJ-ADG-DLTFET in the entire manuscript. In this context, Silvaco ATLAS simulator is used to evaluate DC and Analog/RF performance parameters such as \(I_{D}-V_{G}\) characteristics, transconductance (\(g_{m}\)), cut off frequency (\(f_{T}\)) and transconductance generation factor (TGF) considering effect of temperature variations. Furthermore, linearity parameters such as second- and third-order voltage intercept point (\(\mathrm{VIP}_{2}, \mathrm{VIP}_{3}\)), 1-dB compression point, third-order input-interception point (\(\mathrm{IIP}_{3}\)) and intermodulation distortion \((\mathrm{IMD}_{3})\) are also evaluated considering temperature variations as these FoM are significant for linear and analog/RF applications.

基于电荷等离子体的无掺杂（DL）隧道场效应晶体管（TFET）被认为是一种新兴的TFET结构，这是由于其不受随机掺杂物波动的影响，并且不需要高的热预算和昂贵的制造退火方法。但是，温度敏感性是预测设备可靠性的主要考虑因素，因为在系统中使用时，半导体材料的带隙会在温度变化的影响下发生变化。因此，在本手稿中，研究了温度变化（200–500 K）对Si / Ge异质结（HJ）非对称双栅极（ADG）DLTFET的模拟/ RF和线性特性的影响，缩写为HJ -ADG-DLTFET在整个手稿中。在这种情况下，\（I_ {D} -V_ {G} \）特性，跨导（\（g_ {m} \）），截止频率（\（f_ {T} \））和跨导产生因子（TGF），考虑了温度变化。此外，线性参数还包括二阶和三阶电压截取点（\（\ mathrm {VIP} _ {2}，\ mathrm {VIP} _ {3} \）），1-dB压缩点，三阶还考虑温度变化来评估输入截取点（\（\ mathrm {IIP} _ {3} \））和互调失真\（（\ mathrm {IMD} _ {3}）\），因为这些FoM对于线性和模拟/ RF应用。