Functional oxides on silicon have been the subject of in-depth research for more than 20 years. Much of this research has been focused on the quality of the integration of materials due to their intrinsic thermodynamic incompatibility, which has hindered the flourishing of the field of research. Nevertheless, growth of epitaxial transition metal oxides on silicon with a sharp interface has been achieved by elaborated kinetically controlled sequential deposition while the crystalline quality of different functional oxides has been considerably improved. In this Research Update, we focus on three applications in which epitaxial ferroelectric oxides on silicon are at the forefront, and in each of these applications, other aspects of the integration of materials play an important role. These are the fields of piezoelectric microelectromechanical system devices, electro-optical components, and catalysis. The overview is supported by a brief analysis of the synthesis processes that enable epitaxial growth of oxides on silicon. This Research Update concludes with a theoretical description of the interfaces and the possibility of manipulating their electronic structure to achieve the desired coupling between (ferroelectric) oxides and semiconductors, which opens up a remarkable perspective for many advanced applications.

中文翻译：

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硅上的外延铁电氧化物及其未来器件应用前景

硅上的功能性氧化物已成为20多年来深入研究的主题。由于其固有的热力学不相容性，许多研究集中在材料集成的质量上，这阻碍了研究领域的蓬勃发展。然而，通过精心设计的动力学控制的顺序沉积已经实现了在硅上具有尖锐界面的外延过渡金属氧化物的生长，同时不同功能氧化物的晶体质量得到了显着改善。在本研究更新中，我们重点关注硅上外延铁电氧化物处于最前沿的三个应用，在每个这些应用中，材料集成的其他方面都起着重要作用。这些是压电微机电系统设备，电光组件和催化领域。对合成过程的简要分析为该概述提供了支持，该合成过程使得能够在硅上外延生长氧化物。本研究更新以对界面的理论描述以及操纵其电子结构以实现（铁电氧化物）氧化物与半导体之间所需耦合的可能性作为结束，这为许多高级应用打开了令人瞩目的前景。