As an essential member of group-V layered materials, gray arsenic (g-As) has recently begun to draw researchers’ attention due to fantastic physical properties predicted by theoretical calculation. However, g-As presents semimetal behavior as the thickness exceeds bilayers, which hinders its further device applications, such as in logic electronics. Herein, we report the growth of high quality gray arsenic–phosphorus–tin (g-AsPSn) alloys via a simple one-step chemical vapor transport process. The as-grown g-AsPSn alloy remains the same layered rhombohedral structure as g-As, while the g-AsPSn alloy shows an opened bandgap compared with g-As. Infrared absorption and photoluminescence spectra reveal a narrow optical bandgap of 0.2 eV. A field effect transistor based on few-layer g-AsPSn alloy flakes shows a typical p-type semiconductor behavior and a relatively high mobility of ∼66 cm² V⁻¹ S⁻¹ under ambient conditions. It can be envisioned that the synthesized two-dimensional layered narrow-gap g-AsPSn alloy presents considerable potential applications in electronics and infrared optoelectronics.

中文翻译：

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层状灰色砷合金中的带隙开口

作为V族层状材料的重要组成部分，由于理论计算所预测的出色物理性能，灰色砷（g-As）最近已引起研究人员的注意。然而，当厚度超过双层时，g-As表现出半金属特性，这阻碍了其进一步的器件应用，例如在逻辑电子学中。在这里，我们报告了通过简单的一步化学气相传输过程，高质量的灰色砷-磷-锡（g-AsPSn）合金的生长。刚生长的g-AsPSn合金与g-As保持相同的层状菱形结构，而g-AsPSn合金与g-As相比显示出开放的带隙。红外吸收和光致发光光谱显示出0.2 eV的窄光学带隙。在环境条件下为²  V ^-1 S ^-1。可以预见，合成的二维分层窄间隙g-AsPSn合金在电子学和红外光电子学中具有相当大的潜在应用。