We report high-speed performance for a photodetector operating at zero bias—with zero dark current and zero DC electrical power dissipation. Photocurrent generation is achieved through phonon-assisted absorption in a silicon microring resonator embedded with silicon-germanium, resulting in a responsivity of 0.35 and 0.043 A/W at wavelengths around 1180 and 1270 nm, respectively. We measure a 3 dB bandwidth of 14 GHz, the fastest reported to date for a zero-biased ring-resonant photodetector and which represents a 7× improvement with respect to previous work. We explore the source of such improvement through TCAD simulations and conclude that the optimization of the doping profile significantly decreases the effective carrier lifetime by limiting the impact of the photogenerated carriers drifting into the outer circumference of the resonator, with a low electric field. Using experimental data, we also extract both the free carrier and the phonon-assisted silicon-germanium absorption coefficient, showing good agreement with literature data. High-speed operation at temperatures up to 150 °C is also demonstrated.

中文翻译：

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高速，零偏置硅锗光电探测器

我们报告了在零偏压下工作的光电探测器的高速性能-零暗电流和零直流电耗散。通过嵌入硅锗的硅微环谐振器中的声子辅助吸收，实现了光电流的产生，分别在波长1180和1270 nm处的响应度分别为0.35和0.043 A / W。我们测量的3 dB带宽为14 GHz，这是迄今为止零偏环谐振光电检测器报告的最快速度，相对于以前的工作而言，它代表了7倍的改进。我们通过TCAD仿真探索了这种改进的源头，并得出结论，掺杂分布的优化通过限制光生载流子漂移到谐振器外圆周的影响，显着降低了有效载流子寿命，低电场。使用实验数据，我们还提取了自由载流子和声子辅助的硅锗吸收系数，与文献数据显示出良好的一致性。还展示了在高达150°C的温度下高速运行。