The sizes of commercial transistors are of nanometer order, and there have already been many proposals of spin qubits using conventional complementary metal–oxide–semiconductor transistors. However, most of the previously proposed spin qubits require many wires to control a small number of qubits. This causes a significant “jungle of wires” problem when the qubits are integrated into a chip. Herein, to reduce the complicated wiring, we theoretically consider spin qubits embedded into fin field-effect transistor (FinFET) devices such that the spin qubits share the common gate electrode of the FinFET. The interactions between qubits occur via the Ruderman–Kittel–Kasuya–Yosida interaction via the channel of the FinFET. The possibility of a quantum annealing machine is discussed in addition to the quantum computers of the current proposals.

中文翻译：

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使用鳍式场效应晶体管的公共门结构的紧凑型自旋量子位

商业晶体管的尺寸约为纳米级，并且已经有许多使用常规互补金属-氧化物-半导体晶体管的自旋量子位的建议。然而，大多数先前提出的自旋量子位需要许多导线来控制少量的量子位。当将量子位集成到芯片中时，这会导致严重的“电线杂乱”问题。在此，为了减少复杂的布线，我们从理论上考虑嵌入到鳍式场效应晶体管（FinFET）器件中的自旋量子位，以使自旋量子位共享FinFET的公共栅极。量子位之间的相互作用通过FinFET的通道通过Ruderman–Kittel–Kasuya–Yosida相互作用发生。除了当前建议的量子计算机之外，还讨论了量子退火机的可能性。