In this paper, a single particle irradiation experiment is performed on the 600 V trench insulated gate bipolar transistor for the first time. The experimental results show that, at the collector voltages of 100 V and 300 V, single event gate rupture occurs in the device under the linear energy transfer of 81.35 MeV cm²/g. The damage occurs in the gate oxide layer near the bottom of the trench gate. The simulation results show that the holes accumulated at the bottom of the trench gate increase the electric field under irradiation, which causes the failure of the gate oxide. Furthermore, the hardening device structure is proposed by increasing the thickness of the bottom gate oxide.

中文翻译：

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600 V沟槽式IGBT的单事件栅极破裂和硬化的实验研究

本文首次对600 V沟槽绝缘栅双极型晶体管进行了单粒子辐照实验。实验结果表明，在100 V和300 V的集电极电压下，在81.35 MeV cm ² / g的线性能量转移下，器件中发生单事件栅极破裂。损坏发生在沟槽栅极底部附近的栅极氧化层中。仿真结果表明，在沟槽栅底部积累的空穴会增加辐照下的电场，从而导致栅氧化层的失效。此外，通过增加底栅氧化物的厚度提出了硬化装置的结构。