Creating voids between thin films is a very effective method to improve thin film crystal quality. However, for AlN material systems, the AlN layer growth, including voids, is challenging because of the very high Al atom sticking coefficient. In this study, we demonstrated an AlN template with many voids grown on AlN nanorods made by polarity selective epitaxy and etching methods. We introduced a low V/III ratio and NH₃ pulsed growth method to demonstrate high-quality coalesced AlN templates grown on AlN nanorods in a metal organic chemical vapor deposition reactor. The crystal quality and residual strain of AlN were enhanced by the void formations. It is expected that this growth method can contribute to the demonstration of high-performance deep UV LEDs and transistors.

中文翻译：

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通过极性选择外延和刻蚀方法在AlN纳米棒上生长的含空隙AlN层

在薄膜之间产生空隙是提高薄膜晶体质量的非常有效的方法。然而，对于AlN材料系统，由于非常高的Al原子粘附系数，AlN层的生长（包括空隙）是具有挑战性的。在这项研究中，我们展示了通过极性选择外延和蚀刻方法在AlN纳米棒上生长有许多空隙的AlN模板。我们介绍了一种低V / III比和NH ₃脉冲生长方法，以演示在金属有机化学气相沉积反应器中的AlN纳米棒上生长的高质量聚结AlN模板。AlN的晶体质量和残余应变通过空隙的形成得以增强。可以预期，这种生长方法将有助于高性能深紫外LED和晶体管的演示。