This paper reports the experimentally measured thermal and electrical conductivities from which the Lorenz numbers as functions of temperature were derived for the solids and melts of elemental Te and samples of Hg_1−xCd_xTe of x = 0, 0.1, and 0.2. The structural changes in the vicinity of the solid–liquid phase transition of elemental Te and various Hg_1−xCd_xTe solid solutions were assessed by closely examining these experimental properties and the derived Lorenz numbers. The values of Lorenz numbers for the solids of these samples were higher than the value of L₀, i.e., the Lorenz number for the free-electron gas derived by Sommerfeld [Naturwissenschaften 15, 825 (1927)], implying the characteristics of a non-degenerate semiconductor. With the increasing value of x, or the larger bandgap, the materials become more non-degenerate with larger deviation from L₀. As the solids started to melt, the measured values of the Lorenz number for all samples started to decrease and eventually reached and maintained at values close to L₀ at higher temperatures. The trend of the Lorenz number indicates the transition from a non-degenerate semiconductor of the solid samples to a metal or degenerate semiconductor when the temperatures of the samples reached above their liquidus temperatures.

中文翻译：

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Te的固体/熔体和Hg1-xCdxTe的伪二元形式的x中的半导体到金属的跃迁（x = 0、0.1和0.2）

本文报道了实验测得的热导率和电导率，从中得出了元素Te和x = 0、0.1和0.2的Hg _1-x Cd _x Te的固体和熔体的Lorenz数作为温度的函数。通过仔细检查这些实验性质和导出的洛伦兹数，评估了元素Te和各种Hg _1-x Cd _x Te固溶体在固-液相转变附近的结构变化。这些样品的固体的洛伦兹数高于L ₀的值，即Sommerfeld [Naturwissenschaften 15，825（1927）]，暗示了非简并半导体的特性。随着x值的增加或带隙较大，材料变得更不退化，并且与L _0的偏差更大。随着固体开始熔化，所有样品的洛伦兹数的测量值开始下降，并最终在较高温度下达到并维持在接近L _0的值。洛伦兹数的趋势表明当样品的温度达到其液相线温度以上时，从固体样品的未退化的半导体过渡到金属或退化的半导体。