The spin-orbit torque (SOT) using spin Hall effect has led to significant innovations in spintronics. Recently, SOT switching of an antiferromagnetic state of the Weyl semimetal Mn₃Sn is realized by passing electrical current into Mn₃Sn/heavy metal heterostructures. Here we demonstrate the SOT switching of Hall resistance in polycrystalline Mn₃Sn/Pt, Mn₃Sn/W and Mn₃Sn/Cu/Pt, Mn₃Sn/Cu/W heterostructures. Our experiments indicate that the sign of the spin Hall angle of heavy metals determines the direction of magnetic switching in both devices with and without Cu insertion layer, being consistent with the SOT mechanism. In Mn₃Sn/Pt and Mn₃Sn/W bilayer devices, the critical current density of electrical switching is ∼10¹¹A/m² in heavy metals. In addition, we find that the volume fraction of the switched Mn₃Sn domain is nearly the same in devices with and without Cu layer, which indicates that the spin current generated from the spin Hall effect of Pt or W contributes dominantly to the SOT compared to possible interfacial effects at Mn₃Sn/heavy metal interface.

中文翻译：

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多晶Mn3Sn / Cu /重金属异质结构中反铁磁态的自旋轨道转矩转换

利用自旋霍尔效应的自旋轨道转矩（SOT）导致了自旋电子学的重大创新。近来，通过将电流传递到Mn ₃ Sn /重金属异质结构中来实现Weyl半金属Mn ₃ Sn的反铁磁状态的SOT切换。在这里，我们证明了多晶Mn ₃ Sn / Pt，Mn ₃ Sn / W和Mn ₃ Sn / Cu / Pt，Mn ₃ Sn / Cu / W异质结构中霍尔电阻的SOT转换。我们的实验表明，重金属的自旋霍尔角的符号决定了无论有无Cu插入层的器件中的磁开关方向，这与SOT机制一致。在Mn ₃ Sn / Pt和Mn _3中在Sn / W双层器件中，重金属中电气开关的临界电流密度约为^{10 11} A / m ²。此外，我们发现在有铜层和无铜层的器件中，转换后的Mn ₃ Sn域的体积分数几乎相同，这表明与POT或W的自旋霍尔效应相比，自旋霍尔效应产生的自旋电流占主导地位。可能对Mn ₃ Sn /重金属界面的界面产生影响。