Accurately extracting device parameters plays an import role in the application and development of TFTs. Although several methods have been proposed to extract the device parameters of TFT devices with amorphous channel materials, these current methods are unsuitable for AOS TFT devices, due to the different charge transport mechanisms. Here, a novel method of extracting device parameters has been presented for IGZO TFTs. The proposed method can accurately and quickly extract device parameters of TFTs through the simple mathematical process for transfer curves. Based on the proposed method, the critical parameters in IGZO TFT devices, such as γ, $V_{th}$ and ${\mu }_0$, were obtained. And the temperature dependence of device parameters has been discussed in detail.

准确地提取设备参数在TFT的应用和开发中起着重要的作用。尽管已经提出了几种方法来提取具有非晶沟道材料的TFT器件的器件参数，但是由于不同的电荷传输机制，这些当前方法不适用于AOS TFT器件。在此，提出了一种用于IGZO TFT的提取设备参数的新颖方法。通过简单的传递曲线数学过程，该方法可以准确，快速地提取TFT的器件参数。基于提出的方法，IGZO TFT器件中的关键参数γ，${\mathrm{伏特}}_{ŤH}$ 和 ${\mu }_0$，已获得。并且已经详细讨论了器件参数的温度依赖性。