Line defects (LDs) are a kind of lattice imperfection widely existing in two-dimensional materials, which may play a significant role in the properties of materials. Different from the negative effect of LDs for stability in most 2D materials, we have proposed a simple universal rule to construct stable 2D boron isomers based on the LDs engineering, where the self-assembled monolayers are unconventionally enhanced. Based on the self-assembly of LDs from ${\beta }_{12}$ and ${\chi }_3$ monolayers, we have found several boron monolayers with higher stability on the Ag (111) substrate than the experimental phases, and two monolayers in our prediction have been confirmed by the recent experiments. Notably, the mechanical response of the boron monolayers also can be enhanced by the LDs, indicating the potential application for advanced flexible electronic devices.

中文翻译：

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二维硼单层中的非常规线缺陷工程

线缺陷（LD）是二维材料中广泛存在的一种晶格缺陷，可能在材料的性能中起重要作用。与大多数2D材料中LDs对稳定性的负面影响不同，我们基于LDs工程提出了一种简单的通用规则来构造稳定的2D硼异构体，其中自组装单分子层得到了非常规的增强。基于LD的自组装${\beta }_{12}$ 和 ${\chi }_3$我们发现在Ag（111）衬底上比实验阶段具有更高稳定性的几个硼单层，最近的实验已经证实了我们预测中的两个单层。值得注意的是，LD也可以增强硼单层的机械响应，这表明了其在先进柔性电子设备中的潜在应用。