The graphitic phases detected in chemical vapour deposited (CVD) ZrC layers were characterized by glancing angle X-ray diffraction. The layers were deposited at different temperatures ranging from 1250 to 1450°C in steps of 50°C. The precursors used were ZrCl₄ and CH₄ in the presence of hydrogen and argon. A total of seven graphitic phases were detected, five of which have been reported in the literature. However, two new hexagonal graphitic phases, P-6m2 (187) and P-62c (190), were also detected. It is proposed that the appearance of these two (new) phases was due to the influence of impurities in the growth region on the growth kinetics. A comprehensive phase identification process was followed to index all observed diffraction lines, followed by Rietveld analysis, to report on phase composition and crystalline properties. A distinct increase in overall graphite phase composition is observed at the higher CVD temperatures, which confirms the impact from graphitization.

在化学气相沉积（CVD）ZrC层中检测到的石墨相通过掠射角X射线衍射进行了表征。以50℃的步长在1250至1450℃的不同温度下沉积这些层。使用的前体是ZrCl ₄和CH ₄在氢气和氩气的存在下。总共检测到七个石墨相，文献中已报道其中五个。但是，还检测到两个新的六角形石墨相P-6m2（187）和P-62c（190）。提出这两个（新）相的出现是由于生长区域中的杂质对生长动力学的影响。遵循全面的相识别过程，对所有观察到的衍射线进行索引，然后进行Rietveld分析，以报告相组成和晶体性质。在较高的CVD温度下观察到总体石墨相组成明显增加，这证实了石墨化的影响。