In this study, we report on the synthesis of SnS/Ag/SnS trilayer films for photovoltaic applications by the radio frequency (RF) sputtering method. The effect of the Ag thin film on the physical properties of the SnS film was systematically investigated. The SnS/Ag/SnS trilayer film solar cell obtained a higher short circuit current density (J_sc) of 17.13 mA/cm² and a higher efficiency (η_max) of 5.24% than those of the SnS film solar cell (J_sc = 14.21 mA/cm², η = 3.23%). The improved photocurrent density (PCD) mainly resulted from the enhancement of the separation efficiency of photogenerated electron-hole pair and the decrease in trapping charge carriers in impurity centers as well as the reduction of the leakage current in the active region. These results could be useful for fabricating the next-generation photovoltaic device with high efficiency.

在这项研究中，我们报告了通过射频（RF）溅射方法合成用于光伏应用的SnS / Ag / SnS三层膜。系统地研究了Ag薄膜对SnS薄膜物理性能的影响。所述SNS /银/ SnS的三层膜太阳能电池获得更高的短路电流密度（Ĵ _SC 17.13毫安/平方厘米）²和更高的效率（η_最大的5.24％比所述SNS薄膜太阳能电池的）（Ĵ _SC  = 14.21毫安/厘米²，η = 3.23％）。改善的光电流密度（PCD）主要是由于提高了光生电子-空穴对的分离效率，减少了杂质中心的俘获电荷载流子以及减少了有源区中的泄漏电流。这些结果对于以高效率制造下一代光伏器件可能是有用的。