In this paper, the role of gold nanoparticles on the temporal response of a porous silicon gas sensor has been studied. The porous layer was prepared by a laser-assisted etching process using 810 nm wavelength and 2 W infrared laser diode as an illumination photonics source. The experimental etching conditions involve 20 mA/cm² current density and 10 min etching time. Gold nanoparticles were incorporated into porous silicon structures via the ion reduction process. The characteristics of sensors were studied comprehensively by SEM, XRD, and the electrical properties were investigated for the sensor before and after the gold nanoparticles incorporation process. The obtained results manifested that the decay time of the sensor was reduced by a factor almost greater than (50%) as compared with the bare porous silicon sensor. The results were discussed based on the role of gold nanoparticles that enhanced the thermal conductivity of porous silicon. A higher thermal conductivity of about (130 W/mK) due to the gold nanoparticles was achieved as compared with the bare porous silicon gas sensor.

在本文中，已经研究了金纳米颗粒对多孔硅气体传感器的时间响应的作用。通过使用810nm波长和2W红外激光二极管作为照明光子源的激光辅助蚀刻工艺来制备多孔层。实验蚀刻条件涉及20 mA / cm ²电流密度和10分钟的蚀刻时间。金纳米颗粒通过离子还原过程掺入多孔硅结构中。通过SEM，XRD对传感器的特性进行了全面研究，并研究了金纳米粒子掺入前后的电学性能。获得的结果表明，与裸露的多孔硅传感器相比，传感器的衰减时间减少了几乎大于（50％）的倍数。基于金纳米颗粒增强多孔硅导热性的作用，对结果进行了讨论。与裸露的多孔硅气体传感器相比，由于金纳米颗粒，获得了约（130 W / mK）的较高导热率。