As the fundamental energy storage components in electronic systems, dielectric capacitors with high power densities were demanded. In this work, the anti-ferroelectric Pb_0.89La_0.06Sr_0.05(Zr_0.95Ti_0.05)O₃ (PLSZT) ceramics and thin film capacitor were successfully fabricated by a solid-state reaction route and pulsed laser deposition method, respectively. The ferroelectric, dielectric, energy-storage properties, and temperature stability of anti-ferroelectric PLSZT capacitor were investigated in detail. By compared with the PLSZT ceramic (energy storage density is 1.29 J/cm³ with an efficiency of 78.7% under 75 kV/cm), the anti-ferroelectric PLSZT thin film capacitors exhibited the enhanced energy storage density of 52.6 J/cm³ with efficiency of 67.7% under an electric field as high as 2068.9 kV/cm, and the enhanced energy-storage temperature stabilities from room temperature (RT) to more than 200 °C were demonstrated, and the oxygen defects mechanism and size effect were discussed. Moreover, the fast charging (∼0.05 μs) and discharging (∼0.15 μs) time were certified for the anti-ferroelectric PLSZT film capacitor. These findings broaden the horizon for PLSZT anti-ferroelectrics in high energy storage properties and show promising for manufacturing pulse power capacitor.

作为电子系统中基本的储能元件，需要具有高功率密度的介电电容器。在这项工作中，反铁电Pb _0.89 La _0.06 Sr _0.05 (Zr _0.95 Ti _0.05 )O ₃ (PLSZT) 陶瓷和薄膜电容器分别通过固态反应路线和脉冲激光沉积方法成功制备。详细研究了反铁电PLSZT电容器的铁电、介电、储能和温度稳定性。与PLSZT陶瓷相比（储能密度为1.29 J/cm ³75 kV/cm 下效率为 78.7%），反铁电 PLSZT 薄膜电容器在高达 2068.9 kV/cm 的电场下表现出 52.6 J/cm ³的增强储能密度和 67.7% 的效率，并证明了从室温 (RT) 到超过 200 °C 的增强的储能温度稳定性，并讨论了氧缺陷机制和尺寸效应。此外，反铁电PLSZT薄膜电容器的快速充电（~0.05 μs）和放电（~0.15 μs）时间得到了认证。这些发现拓宽了 PLSZT 反铁电体在高储能特性方面的视野，并显示出制造脉冲功率电容器的前景。