In this article, a novel topology of wideband on-chip Wilkinson power divider (WPD) with good insertion loss (IL) performance is proposed and demonstrated on gallium arsenide (GaAs)-based integrated passive device (IPD) technology. The proposed WPD is further analyzed by the even and odd method. To verify the advantage of the proposed WPD against the conventional one, two examples are numerically investigated, showing that the proposed one achieves better performance in terms of IL and isolation. In addition, the proposed design achieves a miniature area and small amplitude and phase imbalance (AI) performance. The fractional bandwidth (FBW) of the proposed WPD is 100% (6-18 GHz), where the magnitude imbalance is less than 0.08 dB and phase imbalance is better than 0.4°. Furthermore, the minimum IL is better than 0.96 dB and return loss is better than 13.7 dB within the core passband. Meanwhile, the isolation of the WPD is better than 17.6 dB. Finally, to further demonstrate our design conception, the proposed WPD has been fabricated on GaAs IPD technology with size of 1.5 × 0.9 mm², and measured by on-wafer probing. All the simulated and measured results of the proposed WPD are matched reasonably well with each other, thus firmly validating the claimed superior performance of the proposed WPD in the wide operating bandwidth, low IL, and high isolation.

中文翻译：

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基于砷化镓集成无源器件技术的紧凑型宽带威尔金森功率分配器

在本文中，提出了一种具有良好插入损耗 (IL) 性能的宽带片上威尔金森功率分配器 (WPD) 的新型拓扑结构，并在基于砷化镓 (GaAs) 的集成无源器件 (IPD) 技术上进行了演示。通过偶数和奇数方法进一步分析所提出的 WPD。为了验证所提出的 WPD 相对于传统 WPD 的优势，对两个例子进行了数值研究，表明所提出的 WPD 在 IL 和隔离方面实现了更好的性能。此外，所提出的设计实现了微型面积和小幅度和相位不平衡 (AI) 性能。建议的 WPD 的分数带宽 (FBW) 为 100% (6-18 GHz)，其中幅度不平衡小于 0.08 dB，相位不平衡优于 0.4°。此外，最小 IL 优于 0。在核心通带内为 96 dB，回波损耗优于 13.7 dB。同时，WPD 的隔离度优于 17.6 dB。最后，为了进一步证明我们的设计理念，所提出的 WPD 已在 GaAs IPD 技术上制造，尺寸为 1.5 × 0.9 mm²，并通过晶圆上探测进行测量。所提出的 WPD 的所有模拟和测量结果相互匹配得相当好，从而有力地证明了所提出的 WPD 在宽工作带宽、低 IL 和高隔离度方面的优越性能。