Defect engineering plays an important role in tailoring the electronic transport properties of van der Waals materials. However, it is usually achieved through tuning the type and concentration of defects, rather than dynamically reconfiguring their spatial distribution. Here, we report temperature-sensitive spatial redistribution of defects in $\mathrm{Pd}{\mathrm{Se}}_2$ thin flakes through scanning tunneling microscopy. We observe that the spatial distribution of Se vacancies in $\mathrm{Pd}{\mathrm{Se}}_2$ flakes exhibits a strong anisotropic characteristic at 80 K, and that this orientation-dependent feature is weakened when temperature is raised. Moreover, we carry out transport measurements on $\mathrm{Pd}{\mathrm{Se}}_2$ thin flakes and show that the anisotropic features of carrier mobility and phase coherent length are also sensitive to temperature. Combining with theoretical analysis, we conclude that temperature-driven defect spatial redistribution could interpret the temperature-sensitive electrical transport behaviors in $\mathrm{Pd}{\mathrm{Se}}_2$ thin flakes. Our work highlights that engineering spatial distribution of defects in the van der Waals materials, which has been overlooked before, may open up an avenue to tailor the physical properties of materials and explore different device functionalities.

中文翻译：

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PdSe2薄片中缺陷的温度敏感性空间分布

缺陷工程在调整范德华材料的电子传输性能中起着重要作用。但是，通常是通过调整缺陷的类型和浓度来实现的，而不是动态地重新配置缺陷的空间分布。在这里，我们报告了缺陷中温度敏感的空间再分布$钯{硒}_{\mathrm{2个}}$薄薄的薄片通过扫描隧道显微镜。我们观察到硒空位的空间分布$钯{硒}_{\mathrm{2个}}$薄片在80 K时表现出很强的各向异性，并且当温度升高时，这种与方向有关的特性会减弱。此外，我们还对$钯{硒}_{\mathrm{2个}}$薄片，表明载流子迁移率和相干长度的各向异性特征也对温度敏感。结合理论分析，我们得出结论，温度驱动的缺陷空间重新分布可以解释温度敏感的电输运行为。$钯{硒}_{\mathrm{2个}}$薄片。我们的工作强调，范德华材料中缺陷的工程空间分布（以前已被忽略）可能会开辟一条途径来定制材料的物理特性并探索不同的器件功能。