A dominant UV emission at 397 nm and an n-type conductivity in the manganese (Mn) doped Zinc Telluride (ZnTe) quantum dots (QDs) are reported in this article. Energy Dispersive X-ray analysis (EDAX) is used to confirm the composition of the undoped and Mn²⁺ doped ZnTe QDs. High Resolution Transmission Electron Microscopic (HRTEM) images depict the systematic and homogeneously distributed QDs. Selected Area Electron Diffraction (SAED) patterns exemplify the crystalline nature of the as synthesized QDs. From the X-ray Photoelectron Spectroscopic (XPS) analysis, Mn is found to be present in its divalent state of Mn²⁺. Tauc plots confirm the blue shift for the Mn²⁺ doped ZnTe QDs and the energy band gap is found to vary between 3 and 3.3 eV. The photoluminescence spectra in the red spectral region depicts the quenching effect when doped with Mn²⁺ and this may be attributed to the F-center like defects. The absence of the peak at about 525 nm wavelength (2.369 eV) indicates the suppressed Zn vacancy defects, in both undoped and Mn²⁺ doped ZnTe QDs. From the van der Pauw method of Hall measurements, Mn²⁺ doping in an n-type ZnTe QDs is found to increase the mobility and conductivity of the carriers than that is observed in the undoped ZnTe QDs. From the photoluminescence and van der Pauw Hall measurement studies, it can be said that Mn²⁺ is a worthy dopant for ZnTe QDs and can be used in the fabrication of p-n homo–junction diode.

本文报道了锰（Mn）掺杂的碲化锌（ZnTe）量子点（QDs）中397 nm处的主要UV发射和n型电导率。能量色散X射线分析（EDAX）用于确认未掺杂和Mn ^{2 +}掺杂的ZnTe QD的成分。高分辨率透射电子显微镜（HRTEM）图像描绘了系统且均匀分布的量子点。选定区域电子衍射（SAED）图案说明了合成QD的晶体性质。根据X射线光电子能谱（XPS）分析，发现Mn以其二价状态Mn ^{2 +存在}。Tauc图确认了Mn ^{2 +}的蓝移掺杂的ZnTe QD，能带隙在3到3.3 eV之间变化。红色光谱区域中的光致发光光谱描述了掺杂Mn ^{2 +}时的猝灭效应，这可能归因于像缺陷一样的F中心。在未掺杂和Mn ^{2 +}掺杂的ZnTe QD中，在约525 nm波长（2.369 eV）处均不存在峰值表明抑制了Zn空位缺陷。根据霍尔测量的范德堡方法，发现n型ZnTe量子点中的Mn ^{2 +}掺杂比未掺杂的ZnTe量子点中增加的载流子迁移率和电导率。从光致发光和范德堡Hall测试研究，可以说，锰^{2 +} 是ZnTe QD的有价值的掺杂剂，可用于制造pn均质结二极管。