The next wave of Information technology is powered by Industry 4.0 which brings digital and physical technologies together to create interconnected operations. Sensors would be required to be embedded in physical objects to capture and stream data on a continuous basis. Energy harvesting is critical for these sensors, which need continuous supply of electricity for reliable transmission of data. Graphene/Silicon (Gr/Si) Metal–Insulator-semiconductor (MIS) solar cells are emerging to be the most suitable option for energy harvesting for applications in wireless sensor networks (WSN). But efficiency is constrained by surface defects and dangling bonds. High carrier recombination at the Silicon surface restricts enhancement w.r.t. open circuit voltage (Voc) and minority carrier lifetime (τ_eff). In this study, 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene, thin film is employed as electron blocking layer. The novelty of the work is the addition of the oxide layer between TIPS Pentacene and Silicon. This work simulates and verify experimentally, the passivation ability of TIPS Pentacene along with oxidation of Silicon surface. The band alignment between TIPS Pentacene and Silicon, increases the Schottky barrier height (SBH). Additional oxide layer saturates most of the dangling bonds at the Silicon surface. The average open circuit voltage (Voc) of the MIS silicon solar cell with combination of TIPS Pentacene and oxide layer, increases by ~ 6% as compared with that of only TIPS Pentacene layer. The minority carrier lifetime also enhances by ~ 6%. These solar cells can be manufactured with low temperature and safe chemical oxide passivation process for high efficiency and low cost WSN applications.

下一波信息技术将由工业4.0提供支持，该技术将数字和物理技术结合在一起以创建相互关联的操作。需要将传感器嵌入物理对象中，以连续捕获和流式传输数据。能量收集对于这些传感器至关重要，这些传感器需要持续供电以可靠地传输数据。石墨烯/硅（Gr / Si）金属-绝缘体-半导体（MIS）太阳能电池正在成为无线传感器网络（WSN）中能量收集的最合适选择。但是效率受到表面缺陷和悬空键的限制。硅表面的高载流子重组限制了开路电压（Voc）和少数载流子寿命（_τeff）。在这项研究中，将6,13-​​双（三异丙基甲硅烷基乙炔基）（TIPS）并五苯薄膜用作电子阻挡层。这项工作的新颖之处在于在TIPS并五苯和硅之间增加了氧化层。这项工作在实验上模拟和验证了TIPS并五苯的钝化能力以及硅表面的氧化。TIPS并五苯与硅之间的能带对准增加了肖特基势垒高度（SBH）。附加的氧化物层会使硅表面的大多数悬空键饱和。与仅TIPS并五苯层相比，结合了TIPS并五苯和氧化物层的MIS硅太阳能电池的平均开路电压（Voc）增加了6％。少数载流子寿命也增加了6％。