A new approach for implementation of implant free In0.53Ga0.47As/InAs/In0.53Ga0.47As composite delta-doped stepped poly gate MOSFET is one of the challenging devices due to their inherent advantages of large electron mobility as a comparison with conventional bulk MOSFETs. The minimization of the defect density and border traps at the channel interface, due to the InP layer is one of the attractive features of this proposed buried channel MOSFET. So, the channel mobility will be very high due to a high thermally stable oxide semiconductor interface. As results, low leakage current is observed. Further, the proposed device offers a high driving current in extending to the low energy bandgap due to the addition of the delta-doped layer in the channel region. In this work, the electrostatic behavior along with the RF and linearity performance of 15 nm gate length stepped poly gate In0.53Ga0.47As/InAs/In0.53Ga0.47As buried composite channel using delta layer is investigated using 2D TCAD tool. The comparison has been done between stepped poly gate (SG) MOSFET and composite delta (δ) doped stepped poly gate (CDSG) MOSFET, to validate the advantages of the proposed structure for the realization of low power and high frequency applications.

中文翻译：

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无注入复合沟道 In0.53Ga0.47As/InAs/In0.53Ga0.47As Delta-Doped MOSFET 的高性能和可靠性分析

一种实现无注入 In0.53Ga0.47As/InAs/In0.53Ga0.47As 复合 delta 掺杂阶梯多晶栅 MOSFET 的新方法是具有挑战性的器件之一，因为与传统体相比较，它们具有大电子迁移率的固有优势MOSFET。由于 InP 层，沟道界面处的缺陷密度和边界陷阱的最小化是这种建议的埋入沟道 MOSFET 的吸引人的特征之一。因此，由于高热稳定性氧化物半导体界面，沟道迁移率将非常高。结果，观察到低漏电流。此外，由于在沟道区添加了 delta 掺杂层，所提出的器件在扩展到低能带隙时提供了高驱动电流。在这项工作中，使用 2D TCAD 工具研究了使用 delta 层的 15 nm 栅长阶梯式多晶栅 In0.53Ga0.47As/InAs/In0.53Ga0.47As 埋入复合沟道的静电行为以及 RF 和线性性能。已经在阶梯式多晶栅 (SG) MOSFET 和复合 delta (δ) 掺杂阶梯式多晶栅 (CDSG) MOSFET 之间进行了比较，以验证所提出的结构在实现低功率和高频应用方面的优势。