Significant hole motion has previously been observed in thick pixelated semiconductor detectors such as TlBr. This has been shown to affect depth reconstructions when using simple cathode-to-anode amplitude ratios by altering planar-cathode signals. In this work, a complementary effect altering pixelated-anode signals from a TlBr detector was observed. This effect increases the radiation-sensitive volume of a detector to include the region near the pixelated electrodes. A new depth analog based on the hole-induced pixel signal is introduced for near-pixel events. Applying an additional calibration with this new parameter improved the FWHM at 662 keV of a TlBr detector by 3–4 keV during room-temperature operation. The analysis and techniques are generalizable to ambipolar-sensitive pixelated detectors whose dominant charge carriers are either electrons or holes, allowing extension to promising hole-dominant semiconductors.

先前已经在诸如TlBr的厚像素化半导体检测器中观察到了明显的空穴运动。当通过改变平面阴极信号使用简单的阴极到阳极振幅比时，这已显示出影响深度重建。在这项工作中，观察到互补效应改变了来自TlBr检测器的像素化阳极信号。这种效果增加了检测器的辐射敏感体积，使其包括像素化电极附近的区域。针对近像素事件引入了基于空穴感应像素信号的新深度模拟。在室温操作期间，使用此新参数进行额外的校准可将TlBr检测器在662 keV时的FWHM提高3-4 keV。