The development of high-performance, self-powered ultraviolet (UV) photodetectors (PDs) is of utmost interest for military and industrial applications. Herein, a novel design scheme for enhancing the performance of self-powered PDs based on the p–n heterojunction is proposed. The device architecture is engineered by integrating a nanostructured SnO₂ layer into the n-SnO₂/p-Si heterojunction. The resulting device yields an impressively high photoresponsivity of 22.73 A W⁻¹, a large external quantum efficiency of 9065 %, and an outstanding detectivity of 1.57 × 10¹³ Jones at −5 V for 311 nm. Notably, the PDs possess self-powered characteristics with an extremely high photoresponsivity of 208 mA W⁻¹ and detectivity of 1.17 × 10¹² Jones toward 311 nm without any power supply, suggesting their high potential for future energy-efficient, self-powered, high-performance UV-detecting application.

中文翻译：

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基于 SnO2 纳米结构/Si 异质结的具有超高光响应性 (208 mA W-1) 的自供电紫外光电探测器

高性能、自供电紫外线 (UV) 光电探测器 (PD) 的开发对军事和工业应用具有极大的兴趣。在此，提出了一种基于 p-n 异质结提高自供电 PD 性能的新设计方案。该器件架构是通过将纳米结构的 SnO ₂层集成到 n-SnO ₂ /p-Si 异质结中来设计的。所得器件产生令人印象深刻的 22.73 AW ^{-1 的}高光响应性、9065 % 的大外部量子效率以及-5 V 下 311 nm的 1.57 × 10 ¹³ Jones出色探测率。值得注意的是，PD 具有自供电特性，具有 208 mA W ^{-1 的}极高光响应性和 1.17 × 10 ¹² Jones 在没有任何电源的情况下对 311 nm 的探测率，表明它们在未来节能、自供电、高性能紫外线检测应用方面具有巨大潜力。