Triangular-current-mode (TCM) modulation guarantees zero-voltage-switching across the mains cycle in AC-DC power converters, eliminating hard-switching with a minor ${\approx} {30}{\%}$ penalty in conduction losses over the conventional continuous current mode (CCM) modulation scheme. TCM-operated converters, however, include a wide variation in both switching frequency and switched current across the mains cycle, complicating an analytical description of the key operating parameters to date. In this work, we derive an analytical description for the semiconductor bridge-leg losses in a TCM AC-DC converter, including the rms current and/or conduction losses, switching frequency, and switching losses. For SiC mosfet s, we introduce a new loss model for switching losses under zero-voltage-switching, which we call “residual ZVS losses”. These losses include the constant $C_\text{oss}$ losses found in previous literature but must also add, we find, turn-off losses that occur at high switched currents. The existence and modeling of these turn-off losses, which are due to currents flowing through the Miller capacitance and raise the inner gate source voltage to the threshold level and accordingly limit the voltage slew rate, are validated on the IMZA65R027M1H 650V SiC mosfet . The complete loss model – and the promise of TCM for high power density and high efficiency – is validated on a 2.2 kW hardware bridge-leg demonstrator, which achieves a peak 99.6 $\%$ semiconductor efficiency at full load. The proposed, fully-analytical model predicts bridge-leg losses with only 12 $\%$ deviation at the nominal load, accurately including residual ZVS losses across load, modulation index, and external gate resistance.

中文翻译：

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TCM工作的单相PFC整流器的残余ZVS损耗的解析计算

三角电流模式（TCM）调制可确保AC-DC电源转换器中整个电源周期的零电压开关，从而消除了硬开关 $ {\ approx} {30} {\％} $在传统的连续电流模式（CCM）调制方案上传导损耗的损失。但是，由TCM操作的转换器在整个电源周期中的开关频率和开关电流都存在很大的差异，这使得迄今为止对关键操作参数的分析描述变得更加复杂。在这项工作中，我们获得了TCM AC-DC转换器中半导体桥臂损耗的分析描述，包括均方根电流和/或传导损耗，开关频率和开关损耗。碳化硅mosfet s，我们引入了一种用于零电压开关下的开关损耗的新损耗模型，我们将其称为“残余ZVS损耗”。这些损失包括$ C_ \ text {oss} $在以前的文献中发现的损耗，但我们还必须增加在高开关电流下产生的关断损耗。这些关断损耗的存在和建模，是由于电流流过米勒电容并将内部栅极源极电压提高到阈值水平，从而限制了电压压摆率而在模型上进行了验证。IMZA65R027M1H 650V碳化硅 mosfet 。完整的损耗模型以及TCM有望实现的高功率密度和高效率，已在2.2 kW硬件桥腿演示器上得到验证，该演示器达到了99.6的峰值 $ \％$满载时的半导体效率。拟议的全面分析模型仅预测12条桥腿损失 $ \％$ 额定负载下的偏差，准确地包括负载上的残余ZVS损耗，调制指数和外部栅极电阻。