As scaling of the feature size - the main driving force behind an outstanding increase of the performance of modern electronic circuits - displays signs of saturation, the main focus of engineering research in microelectronics shifts towards finding new paradigms. Any future solution must be scalable and energy efficient while delivering high performance, superior to that of CMOS-based circuits. In order to benefit from the outstanding potential of highly advanced silicon processing technology, any new solution must be CMOS compatible. Emerging nonvolatile memories, including magnetoresistive memories, satisfy the necessary requirements: purely electrical addressability, simple structure, high endurance and fast operation. In this work we present the recent developments in the research of spin-transfer torque and spin-orbit torque random access memories and give a brief overview of spin-based logic. Here, the advantages and challenges of these two main contenders in the magnetic memory field are described and the current technological trends are noted. Areas facing computational challenges due to the long-range interaction of the demagnetizing field are highlighted and an existing solution is presented. The use of reinforcement learning to optimize handling of a purely electrically controllable spin-orbit torque memory cell is introduced and first results showing the switching reliability of an optimized switching pulse sequence under thermal fluctuations are reported.

中文翻译：

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新兴的CMOS兼容磁存储器和逻辑

随着特征尺寸的缩放（现代电子电路性能显着提高的主要推动力）显示出饱和的迹象，微电子工程研究的主要重点转向寻找新的范例。任何未来的解决方案都必须具有可扩展性和能源效率，同时提供优于基于CMOS的电路的高性能。为了受益于高度先进的硅处理技术的巨大潜力，任何新解决方案都必须与CMOS兼容。新兴的非易失性存储器（包括磁阻存储器）满足了必要的要求：纯粹的电寻址能力，简单的结构，高耐久性和快速运行。在这项工作中，我们介绍了自旋传递扭矩和自旋轨道扭矩随机存取存储器研究的最新进展，并简要概述了基于自旋的逻辑。在此，描述了这两个主要竞争者在磁存储领域的优势和挑战，并指出了当前的技术趋势。重点介绍了由于退磁场的长期相互作用而面临计算挑战的区域，并提出了一种现有的解决方案。介绍了使用强化学习优化对纯电可控自旋轨道扭矩存储单元的处理的方法，并首次报道了显示优化的开关脉冲序列在热波动下的开关可靠性的结果。描述了这两个主要竞争者在磁存储领域的优势和挑战，并指出了当前的技术趋势。重点介绍了由于退磁场的长期相互作用而面临计算挑战的区域，并提出了一种现有的解决方案。介绍了使用强化学习优化对纯电可控自旋轨道扭矩存储单元的处理的方法，并首次报道了显示优化的开关脉冲序列在热波动下的开关可靠性的结果。描述了这两个主要竞争者在磁存储领域的优势和挑战，并指出了当前的技术趋势。重点介绍了由于退磁场的长期相互作用而面临计算挑战的区域，并提出了一种现有的解决方案。介绍了使用强化学习优化对纯电可控自旋轨道扭矩存储单元的处理的方法，并首次报道了显示优化的开关脉冲序列在热波动下的开关可靠性的结果。