The Analytical Full Capacitance Model (AFCM) for amorphous oxide semiconductors thin film transistors (AOSTFTs) is first validated, using a 19-stages Ring Oscillator (RO) fabricated and measured. The model was described in Verilog-A language to use it in a circuit simulator in this case SmartSpice from Silvaco. The model includes the extrinsic effects related to specific overlap capacitances present in bottom-gate AOSTFT structures. The dynamic behavior of the simulated circuit, when the TFT internal capacitances are increased or decreased and for different supply voltages of 10, 15 and 20 V, is compared with measured characteristics, obtaining a very good agreement. Afterwards, the AFCM is used to simulate the dynamic behavior of a pixel control circuit for a light emitting diode active matrix display (AMOLED), using an AOSTFT.

中文翻译：

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使用分析型全电容模型（AFCM）对a-IGZO TFT电路进行动态仿真

首先使用制造和测量的19级环形振荡器（RO）对非晶氧化物半导体薄膜晶体管（AOSTFT）的分析全电容模型（AFCM）进行了验证。该模型用Verilog-A语言描述，可在电路仿真器中使用，在本例中为Silvaco的SmartSpice。该模型包括与底栅AOSTFT结构中存在的特定重叠电容有关的外在效应。当TFT内部电容增加或减小并且对于10、15和20 V的不同电源电压时，仿真电路的动态行为与测量的特性进行了比较，获得了很好的一致性。之后，AFCM用于使用AOSTFT来模拟用于发光二极管有源矩阵显示器（AMOLED）的像素控制电路的动态行为。