This work studies the effects of the temperature variation, from 300K to 500K, on the electrical parameters of SOI n-type and p-type junctionless nanowire transistors. The temperature influence on the threshold voltage, subthreshold slope, and the effective carrier mobility were analyzed. The mobility scattering mechanisms were analyzed and show that nanowire devices have the phonon scattering as their major component, although there is a significant component of the ionized impurity scattering that can be identified as well. These electrical parameters were also analyzed for short channel devices with a channel length of 40nm. P-type devices showed higher degradation with the temperature as the doping concentration is higher than n-type devices.

中文翻译：

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SOI无结纳米线晶体管在高温下的电学参数分析

这项工作研究了温度变化（从300K到500K）对SOI n型和p型无结纳米线晶体管的电学参数的影响。分析了温度对阈值电压，亚阈值斜率和有效载流子迁移率的影响。分析了迁移率散射机制，结果表明纳米线器件以声子散射为主要成分，尽管也可以识别出电离杂质散射中的重要成分。还针对通道长度为40nm的短通道设备分析了这些电参数。由于掺杂浓度高于n型器件，P型器件随温度的升高表现出更高的退化。