In order to clarify the mechanism of polishing of double diamond abrasive particles, in this study, the mechanism of material removal and the evolution of single crystal Si workpiece surface under the three-body polishing condition were investigated. The effect of the depth of polishing and the transverse/longitudinal spacing of the double abrasive grains on the three-body polishing were examined. The purpose is to reveal the phase transition, surface morphology, surface damage, material removal rate, temperature, potential energy, and friction force for polishing Si wafer. The analysis of coordination number clarified that the number of phase transition atoms by polishing and abrasion increased with increasing polishing depth and transverse distance of the nanoparticles on the Si work surface, but not especially obvious with increasing longitudinal spacing. Temperature analysis shows that when the polishing depth is 1 nm, the polishing temperature is 456 K, while when the polishing depth is 3 nm, the polishing temperature is 733 K. The temperature difference between the longitudinal group and the transverse group is only 30–40 K. The larger the transverse abrasive grain spacing or the smaller the polishing depth, the smaller the surface roughness; however, the longitudinal abrasive grain spacing has no obvious correlation with the surface roughness.

为了阐明双金刚石磨料的抛光机理，本研究研究了三体抛光条件下材料的去除机理和单晶硅工件表面的演化。研究了抛光深度和双磨粒横向/纵向间距对三体抛光的影响。目的是揭示用于抛光硅晶片的相变，表面形态，表面损伤，材料去除率，温度，势能和摩擦力。配位数的分析表明，通过抛光和磨蚀产生的相变原子数随硅工作表面上纳米颗粒的抛光深度和横向距离的增加而增加，但随着纵向间距的增加，这一点并不是特别明显。温度分析表明，当抛光深度为1 nm时，抛光温度为456 K，而当抛光深度为3 nm时，抛光温度为733K。纵向组和横向组之间的温差仅为30–横向磨粒间距越大或抛光深度越小，表面粗糙度越小； 40K。然而，纵向磨粒间距与表面粗糙度没有明显的相关性。横向磨粒间距越大或抛光深度越小，表面粗糙度越小。然而，纵向磨粒间距与表面粗糙度没有明显的相关性。横向磨粒间距越大或抛光深度越小，表面粗糙度越小。然而，纵向磨粒间距与表面粗糙度没有明显的相关性。