Through silicon via (TSV) is a promising interconnect technology in three-dimensional (3D) integration which has large packing density, improves efficiency and consumes less energy. Since the optimization process of multi-additives system is complicated to achieve void-free TSV copper filling, the use of a single additive become a new trend. In this paper, the using of a triblock copolymer ethylene oxide (EO) - propylene oxide (PO) - ethylene oxide (EO) as a single additive in TSV copper electrodeposition was investigated. High and low concentration of EPE (0.02 g/L and 0.002 g/L) were used for the filling experiment at different current densities. It was found that low concentration EPE had stronger inhibition ability, and achieved “V shape” filling at 0.3 ASD (A/dm²). However, EPE of high concentration would form micelles in electrolyte, resulting in the decrease of inhibition ability. We proposed a mechanism for the different EPE concentrations to explan the phenomenon. In addition, the effect of ultrasonic agitation on EPE filling performance was investigated. With the ultrasonic agitation, bottom-up filling can be achieved at 0.02 g/L, and filling rates can be increased at 0.002 g/L. This can be attributed to the cavitation of the ultrasound which can promote the mass transfer and clean the activated electrode.

硅穿通孔（TSV）是三维（3D）集成中的一种有前途的互连技术，它具有大的封装密度，提高了效率并消耗了较少的能量。由于要实现无空隙的TSV铜填充，复杂的多添加剂系统优化过程很复杂，因此使用单一添加剂成为一种新的趋势。本文研究了三嵌段共聚物环氧乙烷（EO）-环氧丙烷（PO）-环氧乙烷（EO）作为单一添加剂在TSV铜电沉积中的应用。在不同的电流密度下，高和低浓度的EPE（0.02 g / L和0.002 g / L）用于填充实验。发现低浓度的EPE具有更强的抑制能力，并在0.3 ASD（A / dm ²）。但是，高浓度的EPE会在电解质中形成胶束，导致抑制能力下降。我们提出了一种针对不同的EPE浓度来解释该现象的机制。此外，研究了超声搅拌对EPE填充性能的影响。通过超声搅拌，可以实现0.02 g / L的自下而上的灌装，并且可以提高0.002 g / L的灌装速率。这可以归因于超声的空化，该空化可以促进质量传递并清洁活化的电极。