This paper presents a numerical simulation study of copper-indium-gallium-diselenide (CIGS) thin film solar cells. An electron back reflector layer (EBR) is added to the conventional CIGS structure to minimize the recombination of the carriers at the back contact, and then absorber thickness can be further decreased. The impacts of thickness and carrier concentration variations of the CIGS cell structure are investigated to optimize the performance of the solar cell using the simulator SCAPS. The proposed CIGS solar cell achieved a significant improvement in the conversion efficiency of 27.652%, which is more than 43% higher than those previously reported in the literature for the CIGS solar cells. The proposed work does not only greatly improve the efficiency but also the overall thickness of the CIGS layers are dramatically decreased to 505 nm. That is already 3 to 4 times less than the average thickness reported for the conventional CIGS solar cells.

本文提出了铜铟镓硒（CIGS）薄膜太阳能电池的数值模拟研究。将电子背反射层（EBR）添加到常规CIGS结构中，以使背接触处的载流子复合最小化，然后可以进一步减小吸收体的厚度。研究了CIGS电池结构的厚度和载流子浓度变化的影响，以使用模拟器SCAPS优化太阳能电池的性能。提出的CIGS太阳能电池的转换效率达到了27.652％的显着提高，比先前文献中CIGS太阳能电池的转换效率提高了43％以上。拟议的工作不仅大大提高了效率，而且CIGS层的总厚度也大大降低至505 nm。