In this paper, optoelectronic characteristics and related switching behavior of one monolithically integrated silicon light-emitting device (LED) with an interesting wavelength range of 400–900 nm are studied. Through the comparison of two types of geometry, Si avalanche-based LED and Si field-effect LED (Si FE LED), in the same device, we establish the dimensional dependence of the switching speed of the LED. Almost-linear modulation curve implies lower distortion is shown for the Si FE LED with light emission enhancement, and technology computer aided design (TCAD) simulations are in line with the experimental results. Our findings indicate that ON–OFF keying up to GHz frequencies should be feasible with such diodes. Potential applications should include Si FE LED integrated into the micro-photonic systems.

在本文中，研究了一个有趣的波长范围为 400-900 nm 的单片集成硅发光器件 (LED) 的光电特性和相关的开关行为。通过在同一器件中比较基于 Si 雪崩的 LED 和 Si 场效应 LED (Si FE LED) 两种几何形状，我们建立了 LED 开关速度的尺寸依赖性。几乎线性的调制曲线意味着具有光发射增强的 Si FE LED 显示出较低的失真，并且技术计算机辅助设计 (TCAD) 模拟与实验结果一致。我们的研究结果表明，使用此类二极管可以实现高达 GHz 频率的开关键控。潜在应用应包括集成到微光子系统中的 Si FE LED。