A patterned structure of monolithic hexagonal boron nitride (hBN) on a glass substrate, which can enhance the emission of the embedded single photon emitters (SPEs), is useful for onchip single-photon sources of high-quality. Here, we design and demonstrate a monolithic hBN metasurface with quasi-bound states in the continuum mode at emission wavelength with ultrahigh Q values to enhance fluorescence emission of SPEs in hBN. Because of ultrahigh electric field enhancement inside the proposed hBN metasurface, an ultrahigh Purcell factor (3.3 10⁴) is achieved. In addition, the Purcell factor can also be strongly enhanced in most part of the hBN structure, which makes the hBN metasurface suitable for e.g. monolithic quantum photonics.

玻璃基板上的单片六方氮化硼 (hBN) 的图案化结构可以增强嵌入式单光子发射器 (SPE) 的发射，可用于高质量的片上单光子源。在这里，我们设计并展示了具有超高Q值的发射波长的连续模式准结合态的整体 hBN 超表面，以增强 hBN 中 SPE 的荧光发射。由于所提出的 hBN 超表面内的超高电场增强，实现了超高的 Purcell 因子 (3.3 10 ⁴ )。此外，在 hBN 结构的大部分部分，Purcell 因子也可以得到强烈增强，这使得 hBN 超表面适用于例如单片量子光子学。