Artificial intelligence (AI) technologies are accelerating the rapid innovations of multifunctional micro/nanosystems for boosting significant applications in flexible electronics, human healthcare, advanced robotics, autonomous control, and human–machine interfaces. III-nitride semiconductors, e.g. GaN, AlN, InN, and their alloys, exhibit superior device characteristics in high-performance opto-/electronics, due to the unique polarization effects in the non-central-symmetric crystal. Piezotronics, coupled with piezoelectric polarization and semiconductor properties, can provide a novel approach for controlling charge carrier transport across the interfacial Schottky barrier or p–n junction in these piezoelectric semiconductors. It means constructing a direct, real-time, seamless interaction between human/machine and environment, which indicates great potential in emerging AI systems. In this article, we review the research progress of piezotronics on III-nitride semiconductors, summarize the fundamental theory of piezotronics, illustrate flexible device process, present emerging piezotronic intelligent GaN-based devices, and provide innovative supports for building adaptive and interactive AI systems.

人工智能 (AI) 技术正在加速多功能微/纳米系统的快速创新，以促进在柔性电子、人类医疗保健、先进机器人、自主控制和人机界面方面的重要应用。由于非中心对称晶体中独特的偏振效应，III 族氮化物半导体，例如 GaN、AlN、InN 及其合金，在高性能光电/电子器件中表现出优异的器件特性。压电电子学与压电极化和半导体特性相结合，可以提供一种新的方法来控制跨界面肖特基势垒或p-n 的电荷载流子传输这些压电半导体中的结。这意味着在人/机与环境之间构建直接、实时、无缝的交互，这表明新兴人工智能系统具有巨大的潜力。在这篇文章中，我们回顾了压电电子学在 III 族氮化物半导体上的研究进展，总结了压电电子学的基本理论，阐述了柔性器件工艺，展示了新兴的压电智能 GaN 基器件，并为构建自适应和交互式 AI 系统提供了创新支持。