Enhanced post-pulse electric field reversals of Ar, Xe, and XeAr mixture gases in capacitively coupled nanosecond discharges are investigated with Particle-In-Cell simulations in the context of maximizing electron density. The electric field reversal occurs at the falling edge of the voltage pulse and induces electron oscillatory movement in the plasma bulk region. The amplitude of field reversals is affected by driven voltage and the ratio of bulk length to gap distance. Exploiting the field reversal with a so called Plasma frequency dependent Square Wave (PSW) in an optimal gas mixture leads to the highest electron density. Specifically, for a 250 V PSW XeAr mixture case, the electron density is 2.2 times higher compared to a 1 kV DC pure Xe case even if the driven voltage is 4 times less than DC voltage. In 250 V PSW cases, XeAr mixture plasma has 1.2 times higher average electron density and 1.2 times electron temperature in the sheath region than a pure Xe plasma. With a narrower bulk region, the XeAr plasma has an enhanced field reversal and this leads to higher and faster growing electron density and electron temperature than a Xe plasma. For applications using Xe plasmas, XeAr mixture plasmas with PSW can be exploited for high electron density and temperature at reduced costs.

在最大化电子密度的背景下，使用 Particle-In-Cell 模拟研究了电容耦合纳秒放电中 Ar、Xe 和 XeAr 混合气体的增强后脉冲电场反转。电场反转发生在电压脉冲的下降沿，并在等离子体体区引起电子振荡运动。场反转的幅度受驱动电压和体长与间隙距离之比的影响。在最佳气体混合物中利用所谓的等离子频率相关方波 (PSW) 来利用场反转会导致最高的电子密度。具体而言，对于 250 V PSW XeAr 混合物情况，即使驱动电压比直流电压低 4 倍，电子密度也比 1 kV DC 纯氙气情况高 2.2 倍。在 250 V PSW 情况下，XeAr 混合等离子体的平均电子密度是纯 Xe 等离子体的 1.2 倍，鞘层区域的电子温度是其 1.2 倍。由于体区较窄，XeAr 等离子体具有增强的场反转，这导致比 Xe 等离子体更高和更快的电子密度和电子温度。对于使用 Xe 等离子体的应用，可以利用具有 PSW 的 XeAr 混合等离子体以降低成本获得高电子密度和温度。