We report the room temperature bonding of LiNbO₃ and Si wafers based on the use of Si nanolayers. The proposed method employs physical sputtering, which simultaneously activates the surface of an etched Si wafer and forms a Si nanolayer on the surface of a LiNbO₃ wafer. Following sputtering, both wafers are immediately brought into contact and the newly formed Si nanolayer acts as a nanoadhesive. The data presented herein demonstrate that this technique is more effective at directly bonding LiNbO₃ and Si than the conventional surface-activated bonding method. Following activation, the bonded surface energy, which reflects the bond strength, was estimated to be approximately 2.2Jm⁻². This result indicates that the bonding was strong enough to withstand the processes associated with the fabrication of microelectronics devices, including wafer thinning.

我们报告了基于使用 Si 纳米层的 LiNbO ₃和 Si 晶片的室温键合。所提出的方法采用物理溅射，其同时激活蚀刻的硅晶片的表面并在LiNbO ₃晶片的表面上形成Si纳米层。溅射后，两个晶片立即接触，新形成的硅纳米层充当纳米粘合剂。此处提供的数据表明，与传统的表面活化键合方法相比，该技术在直接键合 LiNbO ₃和 Si 方面更有效。活化后，反映键合强度的键合表面能估计约为 2.2Jm ^-2. 该结果表明键合强度足以承受与微电子器件制造相关的工艺，包括晶圆减薄。